Amorphous and Crystalline Silicon Carbide IV [E-Book] : Proceedings of the 4th International Conference, Santa Clara, CA, October 9–11, 1991 / edited by Cary Y. Yang, M. Mahmudur Rahman, Gary L. Harris.
Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of...
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Full text |
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Personal Name(s): | Harris, Gary L., editor |
Rahman, M. Mahmudur, editor / Yang, Cary Y., editor | |
Imprint: |
Berlin, Heidelberg :
Springer,
1992
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Physical Description: |
XII, 432 p. online resource. |
Note: |
englisch |
ISBN: |
9783642848049 |
DOI: |
10.1007/978-3-642-84804-9 |
Series Title: |
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Springer Proceedings in Physics ;
71 |
Subject (LOC): |
- I Growth of Crystalline Silicon Carbide
- Recent Progress in Epitaxial Growth of SiC
- Si1-yCy Alloys — Extending Si-Based Heterostructure Engineering
- Investigation of the Growth of 3C-SiC and 6H-SiC Films on Low-Tilt-Angle Vicinal (0001) 6H-SiC Wafers
- Low Temperature Homoepitaxial Growth of 6H-SiC by VPE Method
- Heteroepitaxial Growth of 3C-SiC by LPCVD with Alternate Gas Supply
- Mechanisms in the Low Pressure Growth of SiC-on-Si by RTCVD
- Effects of CH3Cl Gas on Heteroepitaxial Growth of (?-SiC on Si(111) by Chemical Vapor Deposition
- Growth Simulation of SiC Polytypes and Application to DPB-Free 3C-SiC on Alpha-SiC Substrates
- Epitaxial Growth of Cubic SiC Using Various Alkyl-Silicon Compounds by Chemical Vapor Deposition
- Growth and Characterization of ?-SiC Films Grown on Si by Gas-Source Molecular Beam Epitaxy
- Atomic Layer Control of ?-SiC(001) Surface
- Growth and Characterization of 6H-SiC Bulk Crystals by the Sublimation Method
- Liquid Phase Epitaxy of SiC-AlN Solid Solutions
- Comparison of Dilutely Doped p-Type 6H-SiC from a Variety of Sources
- Growth of Cubic Silicon Carbide on Silicon Using the C2HCl3-SiH4-H2 System
- AC Plasma-Assisted Chemical Vapor Deposition of Cubic Silicon Carbide on Silicon Substrate
- II Characterization of Crystalline Silicon Carbide
- Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 6H-SiC
- Nitrogen Impurities in 3C-SiC Epilayers
- Electron Nuclear Double Resonance Investigations of Nitrogen Donors in 6H and 4H-SiC
- Recrystallization and Electrical Properties of High-Temperature Implanted (N,Al) 6H-SiC Layers
- EPR in the 2-mm Range and Optical Absorption of the Native Defect in 4H-SÍC Epilayers
- The Structure of the D-Center in Silicon Carbide — A Study with Electron Nuclear Double Resonance
- Oxidation Studies for 6H-SiC
- Electronic Band Structures of SiC Calculated from a Hybrid Pseudopotential and Tight-Binding Model
- Metallization Studies on Epitaxial 6H-SiC
- TEM Study of ?-SiC Films Grown on (111) Silicon Substrates
- Thermal Oxidation of Single-Crystal Silicon Carbide: Kinetic, Electrical, and Chemical Studies
- Determination of Stacking-Fault Abundances and Distributions in SiC Using XRPD and HRTEM
- Structural Defects in Epitaxial Layers SiC-3C/Si Grown by CVD
- Observation of Linear Electro-Optic Effect in Cubic Silicon Carbide
- Optically Induced Near-IR Absorption Lines in 6H-SiC
- Interference Fringes in the Infrared Reflectance of 6H-SiC Films on 6H-SiC Substrates
- Low Temperature Photoluminescence of SiC: A Method for Material Characterization and the Influence of an Uniaxial Stress on the Spectra
- III Growth and Characterization of Polycrystalline, Microcrystalline, and Amorphous Silicon Carbide
- Novel Feedstocks for a-SiC:H Films
- Studies of 1,3-Disilacyclobutanes as Single-Source CVD Precursors to Silicon Carbide
- Frequency Dependence of Conductivity of Hydrogenated Amorphous SiC Films Prepared by PCVD
- Formation of SiC for Microelectronic Applications by C Implantation into Doped a-S
- Polycrystalline SiC Films Prepared by a Plasma Assisted Method at Temperatures Lower than 1000°C
- Si?C1?? Alloys Deposited on Silicon Using a Low-Cost, Hot-Wall, LPCVD Reactor
- Low Temperature PECVD Growth and Characterization of a-SiC:H Films Deposited from Silacyclobutane and Silane/Methane Precursor Gases
- Study of Optimum Condition for Microcrystalline SiC Film Formation by ECR Plasma CVD Method
- IV Applications
- Applications for 6H-Silicon Carbide Devices
- HBTs Using a-SiC and µc-Si
- Impact of SiC on Power Devices
- SiC?:F Hetero-Emitter and Epitaxial-Base Bipolar Transistors
- A New Application of a-SiC Films for Realizing High Current Gain Si Heterojunction Bipolar Transistors
- The Development of ECR-CVD SiC Coatings for X-Ray Mask Membranes
- Pattern Etching of Crystalline SiC by KrF Excimer Laser
- Electrical Characterization of PiN Diode Structures in 6H-SiC
- High-Temperature Rectifiers, UV Photodiodes, and Blue LEDs in 6H-SiC
- Dependence of the Au-SiC(6H) Schottky Barriers Height on the SiC Surface Treatment
- Photoelectrochemical Etching and Dopant Selective Etch-Stops in SiC
- Fabrication and Electrical Properties of ?-SiC/Si and Poly-SiC/Si Solar Cells
- Simulations of Ge and C Implantations to Form Si1??Ge? BJT
- The Light Emitting Diodes on the Basis of Fast Electron Irradiated Silicon Carbide
- Graded-Gap and Quantum-Well Injection a-SiC:H p-i-n Light-Emitting Diodes
- High-Temperature and High-Voltage Diamond Devices
- Gamma-Ray Irradiation Effects on Cubic Silicon Carbide Metal-Oxide-Semiconductor Structure
- Formation of SiGe/Si Heterostructures by Low-Temperature Germanium Ion Implantation
- Characterization of Ge and C Implanted Si Diodes
- Selective Growth of SiC and Application to Heterojunction Devices
- Electrical Characterization of Epitaxial Titanium Contacts to Alpha (6H) Silicone Carbide
- Effect of H2 Additive on Reactive Ion Etching of ?-SiC in CHF3/O2 Plasma
- Index of Contributors.