Electronic Structure of Metal-Semiconductor Contacts [E-Book] / edited by Winfried Mönch.
Mönch, Winfried, (editor)
Dordrecht : Springer, 1990
300 p. online resource.
englisch
9789400906570
10.1007/978-94-009-0657-0
Perspectives in Condensed Matter Physics, A Critical Reprint Series ; 4
Full Text
Table of Contents:
  • 1. Preliminary Remarks
  • 2. Conceptual Models
  • 3. Computational Results
  • 4. Experimental Data
  • 5. Surface-Science Approach to Schottky Contacts
  • 6. Concluding Remarks
  • References:
  • Reprinted Articles
  • Additional Reference
  • Reprinted Articles
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  • Zum Mechanismus der Richtwirkung in Kupferoxydulgleichrichtern, Physik. Z. (1929)
  • Halbleitertheorie der Sperrschicht, Naturwissenschaften (1938)
  • Note on the Contact between a Metal and an Insulator or Semiconductor, Proc. Camb. Phil. Soc. (1938)
  • Abweichungen vom Ohmschen Gesetz in Halbleitern, Physik. Z. (1940)
  • Surface States and Rectification at a Metal Semiconductor Contact, Phys. Rev. (1947)
  • Surface States and Barrier Height of Metal Semiconductor Systems, J. Appl. Phys. (1965)
  • Theory of Surface States, Phys. Rev. (1965)
  • Fundamental Transition in the Electronic Nature of Solids, Phys. Rev. Lett. (1969)
  • Density of States and Barrier Height of Metal-Si Contacts, J. Phys. C: Solid State Physics (1971)
  • Metal-semiconductor Junctions for (110) Surfaces of Zinc-blende Compunds, Phys. Rev. B (1976)
  • Electronic Structure of a Metal Semiconductor Interface, Phys. Rev. B (1976)
  • Ionicity and the Theory of Schottky Barriers, Phys. Rev. B (1977)
  • Chemical Trends in Metal-semiconductor Barrier Heights, Phys. Rev. B (1978)
  • Transition in Schottky Barrier Formation with Chemical Reactivity, Phys. Rev. Lett. (1978)
  • New and Unified Model for Schottky Barrier and III-V Insulator Interface States Formation, J. Vac. Sci. Technol. (1979)
  • Schottky Barriers: An Effective Work Function Model, AppL Phys. Lett. (1981)
  • The Foramtion of the Schottky Barrier at the V/Si Interface, J. Vac. Sci. Technol. (1982)
  • Formation of Ultrathin Single- Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Strucutures, Phys. Rev. Lett. (1983)
  • Schottky Barrier Heights and the Continuum of Gap States, Phys. Rev. Lett. (1984)
  • Schottky Barrier Formation at Single-Crystal Metal Semiconductor Interfaces, Phys. Rev. Lett. (1984)
  • Reflection High-energy Electron Diffraction Study of the Growth of In on GaAs (110) at Different Temperatures, J. Vac. Sci. Tecnol. B (1986)
  • Direct Variation of Metal-GaAs Schottky Barrier Height by the Influence of Interface S, Se and Te, AppL Phys. Lett. (1985)
  • Interface Potential Changes and Scottky Barriers, Phys. Rev. B (1985)
  • Ruthenium-Induced Surface Staes of n-GaAs Surfaces, J. Vac. Sci. Technol. B. (1986)
  • Metallization and Scottky Barrier Formation, Phys. Rev. B (1986)
  • On the Present Understanding of Schottky Contacts , Festkörperprobleme (1986)
  • Role of Virtual Gap States and Defects in Metal Semiconductor Contacts Phys. Rev. Lett. (1987)
  • Initial Stages of Schottky Barrier Formation: Temperature Effects, J. Vac. Sci. Technol. B (1987)
  • Kinetics Study of Initial Stage Band Bending at Metal GaAs (110) Interfaces, J. Vac. Sci. Technol. B (1987)
  • The Schottky Contact in a Xe/Metal Interface Probed by Inverse Photoemission, Europhys. Lett. (1987)
  • Origin of the Excess Capacitance at Intimate Schottky Contacts, Phys. Rev. Lett. (1988)
  • Correlation between EfPinning and Development Metallic Character in Ag Overlayers on GaAs (110), Phys. Rev. Lett. (1988)
  • Direct Investigation of Subsurface Interface Electronic Structure by Ballistic-Electron-Emission Microscopy, Phys. Rev. Lett. (1988)
  • Chemical Trends in Schottky Barriers: Charge Transfer into Adsorbate Induced Gap States and Defects, Phys. Rev. B (1988)
  • The Advanced Unified Defect Model for Schottky Barrier Formation, J. Vac. Sci. Technol. B (1988)
  • Screening and Derealization Effects in Schottky Barrier Formation, J. Vac. Sci. Technol. B (1988)
  • Tight-Binding Model of Surface Donor-States Induced by Metal Adatoms on GaAs (110) Surfaces, Europhys. Lett. (1988)
  • Switching of Band Bending at the Nonreactive CsOx/GaAs (110) Interface, Phys. Rev. Lett. (1989)
  • Metallicity and Gap States in Tunneling to Fe Clusters on GaAs (110), Phys. Rev. Lett. (1989).