Aslam, N. (2017). Resistive switching memory devices from atomic layer deposited binary and ternary oxide thin films: Nabeel Aslam. Jülich: Forschungszentrum, Zentralbibliothek.
Chicago Style CitationAslam, Nabeel. Resistive Switching Memory Devices From Atomic Layer Deposited Binary and Ternary Oxide Thin Films: Nabeel Aslam. Jülich: Forschungszentrum, Zentralbibliothek, 2017.
MLA CitationAslam, Nabeel. Resistive Switching Memory Devices From Atomic Layer Deposited Binary and Ternary Oxide Thin Films: Nabeel Aslam. Jülich: Forschungszentrum, Zentralbibliothek, 2017.
Warning: These citations may not always be 100% accurate.