Transport, correlation and structural defects.
Transport, correlation and structural defects in disordered semiconductors
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Personal Name(s): | Fritzsche, H., editor |
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Imprint: |
Singapore :
World Scientific,
1990.
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Physical Description: |
X, 305 S. |
Note: |
englisch |
ISBN: |
9789971509736 9971509733 |
Series Title: |
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Advances in disordered semiconductors ;
vol 0003. |
Keywords: |
general structural model for amorphous semiconductors persistent infrared spectral hole burning of impurity vibrational modes in chalcogenide glasses hydrogen complexes in amorphous silicon thermally induced metastable processes in amorphous hydrogenated silicon hopping photoconductivity in amorphous semiconductors optically excited localized electrons and photoconductivity of disordered semiconductors tunnel recombination in 4- fold coordinated disordered semiconductors anomalous hopping transport in p- type gallium antimonide transport phenomena in relaxation case inhomogeneous semiconductors |
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