Gesteuerte Gasphasendotierung während der Epitaxie zur Erzeugung beliebiger Störstellenprofile.
Saved in:
Personal Name(s): | Raabe, G. |
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Imprint: |
Bonn :
Bundesministerium für Forschung und Technologie,
1975.
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Physical Description: |
71 S. |
Note: |
deutsch |
Series Title: |
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Bundesministerium für Forschung und Technologie. Forschungsbericht T ;
75-0002. |
Keywords: |
semiconductor : epitaxy : impurity semiconductor : crystal doping,experimental method crystal doping : semiconductor,experimental method |
Classification: |
ZB | |
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Open Stacks Call number: S 002139-75-0002'01' Barcode: 1075003065 Available |