Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors [E-Book] / by Mengqi Fu.
This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in...
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Full text |
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Personal Name(s): | Fu, Mengqi, author |
Imprint: |
Singapore :
Springer,
2018
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Physical Description: |
XV, 102 pages 68 illustrations, 57 illustrations in color (online resource) |
Note: |
englisch |
ISBN: |
9789811334443 |
DOI: |
10.1007/978-981-13-3444-3 |
Series Title: |
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Springer Theses, Recognizing Outstanding Ph.D. Research
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Subject (LOC): |
- Introduction
- Preparation, characterization and parameter extraction of InAs nanowire-based devices
- Size effect on the electrical properties of InAs nanowires
- Crystal phase- and orientation-dependent electrical properties of InAs nanowires
- Influence of growth methods on the electrical properties of InAs nanowires
- Summary.