Ferroelectric-Gate Field Effect Transistor Memories [E-Book] : Device Physics and Applications / edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon.
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics an...
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Full text |
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Personal Name(s): | Ishiwara, Hiroshi, editor |
Okuyama, Masanori, editor / Park, Byung-Eun, editor / Sakai, Shigeki, editor / Yoon, Sung-Min, editor | |
Edition: |
1st ed. 2016. |
Imprint: |
Dordrecht :
Springer,
2016
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Physical Description: |
XVIII, 347 pages 254 illustrations, 150 illustrations in color (online resource) |
Note: |
englisch |
ISBN: |
9789402408416 |
DOI: |
10.1007/978-94-024-0841-6 |
Series Title: |
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Topics in Applied Physics ;
131 |
Subject (LOC): |
- Operation Principle of One-Transistor Type Ferroelectric-gate Field Effect Transistors
- Practical Characteristics of Inorganic Ferroelectric-gate FETs
- Si-Based Ferroelectric-gate Field Effect Transistors
- Thin film-Based Ferroelectric-gate Field Effect Transistors
- Practical Characteristics of Organic Ferroelectric-gate FETs
- Si-Based Ferroelectric-gate Field Effect Transistors
- Thin film-Based Ferroelectric-gate Field Effect Transistors
- Ferroelectric-gate Field Effect Transistors with flexible substrates
- Applications and Future Prospects.