APA Citation

Ishiwara, H., Sakai, S., Okuyama, M., Park, B., & Yoon, S. (2020). Ferroelectric-Gate Field Effect Transistor Memories: [E-Book] : Device Physics and Applications / edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon (2nd edition 2020.). Singapore: Springer.

Chicago Style Citation

Ishiwara, Hiroshi, Shigeki Sakai, Masanori Okuyama, Byung-Eun Park, andfavorite Sung-Min Yoon. Ferroelectric-Gate Field Effect Transistor Memories: [E-Book] : Device Physics and Applications / Edited By Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon. 2nd edition 2020. Singapore: Springer, 2020.

MLA Citation

Ishiwara, Hiroshi, et al. Ferroelectric-Gate Field Effect Transistor Memories: [E-Book] : Device Physics and Applications / Edited By Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon. 2nd edition 2020. Singapore: Springer, 2020.

Warning: These citations may not always be 100% accurate.