Integrated Electronics on Aluminum Nitride [E-Book] : Materials and Devices / by Reet Chaudhuri.
This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole ch...
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Full text |
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Personal Name(s): | Chaudhuri, Reet, author |
Edition: |
1st edition 2022. |
Imprint: |
Cham :
Springer,
2022
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Physical Description: |
XVI, 255 pages 124 illustrations, 122 illustrations in color (online resource) |
Note: |
englisch |
ISBN: |
9783031171994 |
DOI: |
10.1007/978-3-031-17199-4 |
Series Title: |
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Springer Theses, Recognizing Outstanding Ph.D. Research
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Subject (LOC): |
- Chapter 1. Introduction
- Chapter 2. Polarization-induced 2D Hole Gases in undoped (In)GaN/AlN Heterostructures
- Chapter 3. GHz-speed GaN/AlN p-channel Heterojunction Field Effect Transistors
- Chapter 4. Polarization-induced 2D Electron and Holes in undoped AlN/GaN/AlN Heterostructures
- Chapter 5. AlN/GaN/AlN High Electron Mobility Transistors
- Chapter 6. Integrated RF Electronics on the AlN Platform.