This title appears in the Scientific Report :
2023
Please use the identifier:
http://dx.doi.org/10.1021/acsami.3c00920 in citations.
Please use the identifier: http://dx.doi.org/10.34734/FZJ-2023-01766 in citations.
Chemical Influence of Carbon Interface Layers in Metal/Oxide Resistive Switches
Chemical Influence of Carbon Interface Layers in Metal/Oxide Resistive Switches
Thin layers introduced between a metal electrode and a solid electrolyte can significantly alter the transport of mass and charge at the interfaces and influence the rate of electrode reactions. C films embedded in functional materials can change the chemical properties of the host, thereby altering...
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Personal Name(s): | Cho, Deok-Yong |
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Kim, Ki-jeong / Lee, Kug-Seung / Lübben, Michael / Chen, Shaochuan / Valov, Ilia (Corresponding author) | |
Contributing Institute: |
Elektronische Materialien; PGI-7 JARA-FIT; JARA-FIT |
Published in: | ACS applied materials & interfaces, 15 (2023) 14, S. 18528–18536 |
Imprint: |
Washington, DC
Soc.
2023
|
DOI: |
10.1021/acsami.3c00920 |
DOI: |
10.34734/FZJ-2023-01766 |
Document Type: |
Journal Article |
Research Program: |
Memristive Materials and Devices |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.34734/FZJ-2023-01766 in citations.
Thin layers introduced between a metal electrode and a solid electrolyte can significantly alter the transport of mass and charge at the interfaces and influence the rate of electrode reactions. C films embedded in functional materials can change the chemical properties of the host, thereby altering the functionality of the whole device. Using X-ray spectroscopies, here we demonstrate that the chemical and electronic structures in a representative redox-based resistive switching (RS) system, Ta2O5/Ta, can be tuned by inserting a graphene or ultrathin amorphous C layer. The results of the orbitalwise analyses of synchrotron Ta L3-edge, C K-edge, and O K-edge X-ray absorption spectroscopy showed that the C layers between Ta2O5 and Ta are significantly oxidized to form COx and, at the same time, oxidize the Ta layers with different degrees of oxidation depending on the distance: full oxidation at the nearest 5 nm Ta and partial oxidation in the next 15 nm Ta. The depth-resolved information on the electronic structure for each layer further revealed a significant modification of the band alignments due to C insertion. Full oxidation of the Ta metal near the C interlayer suggests that the oxygen-vacancy-related valence change memory mechanism for the RS can be suppressed, thereby changing the RS functionalities fundamentally. The knowledge on the origin of C-enhanced surfaces can be applied to other metal/oxide interfaces and used for the advanced design of memristive devices. |