This title appears in the Scientific Report :
2023
Please use the identifier:
http://dx.doi.org/10.1109/JEDS.2023.3297855 in citations.
Please use the identifier: http://dx.doi.org/10.34734/FZJ-2023-02994 in citations.
Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems
Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems
Lateral electrochemical metallization (ECM) cells are fabricated with a combined spacer/damascene process. The process allows the realization of nanoscale geometrical distances between the two electrodes independent of lithography. Such lateral ECM cells are an essential part in a reconfigurable int...
Saved in:
Personal Name(s): | Frahm, T. (Corresponding author) |
---|---|
Buttberg, M. / Gvozdev, G. / Müller, R. A. / Chen, S. / Sun, B. / Raffauf, L. / Menzel, S. / Valov, I. / Wouters, D. / Waser, R. / Knoch, J. | |
Contributing Institute: |
JARA-FIT; JARA-FIT Elektronische Materialien; PGI-7 |
Published in: | IEEE journal of the Electron Devices Society, 11 (2023) S. 432 - 437 |
Imprint: |
[New York, NY]
IEEE
2023
|
DOI: |
10.1109/JEDS.2023.3297855 |
DOI: |
10.34734/FZJ-2023-02994 |
Document Type: |
Journal Article |
Research Program: |
Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - Memristive Materials and Devices |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.34734/FZJ-2023-02994 in citations.
Lateral electrochemical metallization (ECM) cells are fabricated with a combined spacer/damascene process. The process allows the realization of nanoscale geometrical distances between the two electrodes independent of lithography. Such lateral ECM cells are an essential part in a reconfigurable interconnect system that may yield a strongly increased connectivity in artificial neural networks. The lateral cells show memristive properties comparable to vertical cells with switching voltages in the range of −1.5V to 2.5V. The influence of electrode line edge roughness on SET kinetics of such lateral cells is investigated via kinetic Monte Carlo simulations, finding a minor influence on SET time variability. |