This title appears in the Scientific Report :
2023
Please use the identifier:
http://dx.doi.org/10.48550/ARXIV.2312.07325 in citations.
Please use the identifier: http://dx.doi.org/10.34734/FZJ-2023-05763 in citations.
Single in situ Interface Characterization Composed of Niobium and a Selectively Grown (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ Topological Insulator Nanoribbon
Single in situ Interface Characterization Composed of Niobium and a Selectively Grown (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ Topological Insulator Nanoribbon
With increasing attention in Majorana physics for possible quantum bit applications, a large interest has been developed to understand the properties of the interface between a $s$-type superconductor and a topological insulator. Up to this point the interface analysis was mainly focused on in situ...
Saved in:
Personal Name(s): | Janßen, Kevin |
---|---|
Rüßmann, Philipp / Liberda, Sergej / Schleenvoigt, Michael / Hou, Xiao / Jalil, Abdur Rehman / Lentz, Florian / Trellenkamp, Stefan / Bennemann, Benjamin / Zimmermann, Erik / Mussler, Gregor / Schüffelgen, Peter / Schneider, Claus-Michael / Blügel, Stefan / Grützmacher, Detlev / Plucinski, Lukasz / Schäpers, Thomas (Corresponding author) | |
Contributing Institute: |
Quanten-Theorie der Materialien; IAS-1 Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology; JARA-FIT Elektronische Eigenschaften; PGI-6 Halbleiter-Nanoelektronik; PGI-9 Quanten-Theorie der Materialien; PGI-1 |
Imprint: |
arXiv
2023
|
DOI: |
10.48550/ARXIV.2312.07325 |
DOI: |
10.34734/FZJ-2023-05763 |
Document Type: |
Preprint |
Research Program: |
EXC 2004: Materie und Licht für Quanteninformation (ML4Q) Topological Matter |
Subject (ZB): | |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.34734/FZJ-2023-05763 in citations.
With increasing attention in Majorana physics for possible quantum bit applications, a large interest has been developed to understand the properties of the interface between a $s$-type superconductor and a topological insulator. Up to this point the interface analysis was mainly focused on in situ prepared Josephson junctions, which consist of two coupled single interfaces or to ex-situ fabricated single interface devices. In our work we utilize a novel fabrication process, combining selective area growth and shadow evaporation which allows the characterization of a single in situ fabricated Nb/$\mathrm{(Bi_{0.15}Sb_{0.85})_2Te_3}$ nano interface. The resulting high interface transparency is apparent by a zero bias conductance increase by a factor of 1.7. Furthermore, we present a comprehensive differential conductance analysis of our single in situ interface for various magnetic fields, temperatures and gate voltages. Additionally, density functional theory calculations of the superconductor/topological insulator interface are performed in order to explain the peak-like shape of our differential conductance spectra and the origin of the observed smearing of conductance features. |