This title appears in the Scientific Report :
2023
Aharonov-Bohm-type oscillations in phase-pure core/shell GaAs/InAsnanowires
Aharonov-Bohm-type oscillations in phase-pure core/shell GaAs/InAsnanowires
Epitaxially grown core-shell GaAs/InAs nanowires provide heterostructure with transport properties governed by the angular momentum states in the InAs shell formed around highresistance GaAs core . In contrast to polymorphic GaAs/InAs nanowires, phasepure core/shell nanowires, comprising only of wur...
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Personal Name(s): | Basaric, Farah |
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Faustmann, Anton / Behner, Gerrit / Pawlis, Alexander / Krause, Christoph / Lüth, Hans / Grützmacher, Detlev / Schäpers, Thomas | |
Contributing Institute: |
Halbleiter-Nanoelektronik; PGI-9 JARA Institut Green IT; PGI-10 |
Imprint: |
2023
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Conference: | Bound States, Budapest (Hungary), 2023-06-12 - 2023-06-15 |
Document Type: |
Poster |
Research Program: |
Exploratory Qubits |
Subject (ZB): | |
Publikationsportal JuSER |
Epitaxially grown core-shell GaAs/InAs nanowires provide heterostructure with transport properties governed by the angular momentum states in the InAs shell formed around highresistance GaAs core . In contrast to polymorphic GaAs/InAs nanowires, phasepure core/shell nanowires, comprising only of wurtzite crystal structure along the nanowire axis, offer uniformity in their electrical, mechanical and optical properties due to the absenceof a crystallographic disorder. Magnetotransport measurements were carried out at variable temperatures and for different gate voltages, under an axially applied magnetic field. Pronounced Aharonov-Bohm-type oscillations in the conductance could be observed for such phase-pure nanowire type. In measurements at different gate voltages, significantly higher oscillation amplitudes are observed in comparison to the corresponding measurements on polymorphic core/shell nanowires. Measurements at different temperatures show robustness of these oscillations against high temperatures as a result of reduced disorder, where finally, strong indications of a quasi-ballistic transport regime could be recognized. Combining phase–pure core/shell GaAs/InAs nanowires with an in-situ depositedsuperconducting layer, a gate-controlled Josephson junction could be fabricated. In such system, coupling between Andreev bound states with orbital angular momentumstates under an axially applied magnetic field results in orbital Josephson interference. So far, obtained measurement results on GaAs/InAs nanowires indicate a strong effect of disorderreduction in a case of phase-pure nanowire type, manifested in their superior transport properties (as compared to the polymorphic type), thus presenting a promising platform forfuture investigation of orbital Josephson interference. |