This title appears in the Scientific Report :
2024
Please use the identifier:
http://dx.doi.org/10.1002/aelm.202300693 in citations.
Please use the identifier: http://dx.doi.org/10.34734/FZJ-2024-01268 in citations.
Impact of Non‐Stoichiometric Phases and Grain Boundaries on the Nanoscale Forming and Switching of HfO x Thin Films
Impact of Non‐Stoichiometric Phases and Grain Boundaries on the Nanoscale Forming and Switching of HfO x Thin Films
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Personal Name(s): | Schmidt, Niclas |
---|---|
Kaiser, Nico / Vogel, Tobias / Piros, Eszter / Karthäuser, Silvia / Waser, Rainer / Alff, Lambert / Dittmann, Regina (Corresponding author) | |
Contributing Institute: |
Elektronische Materialien; PGI-7 JARA-FIT; JARA-FIT |
Published in: | Advanced electronic materials, 10 (2024) 4, S. 2300693 |
Imprint: |
Weinheim
Wiley-VCH Verlag GmbH & Co. KG
2024
|
DOI: |
10.1002/aelm.202300693 |
DOI: |
10.34734/FZJ-2024-01268 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen der Ionentransportprozesse in resistiv schaltenden Oxiden (B03) Memristive Materials and Devices |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.34734/FZJ-2024-01268 in citations.
Description not available. |