This title appears in the Scientific Report :
2023
Please use the identifier:
http://dx.doi.org/10.34734/FZJ-2024-01443 in citations.
Please use the identifier: http://dx.doi.org/10.1039/D3CP01160G in citations.
Resistive switching and role of interfaces in memristive devices based on amorphous NbO x grown by anodic oxidation
Resistive switching and role of interfaces in memristive devices based on amorphous NbO x grown by anodic oxidation
Saved in:
Personal Name(s): | Leonetti, Giuseppe |
---|---|
Fretto, Matteo / Bejtka, Katarzyna / Olivetti, Elena Sonia / Pirri, Fabrizio Candido / De Leo, Natascia / Valov, Ilia / Milano, Gianluca (Corresponding author) | |
Contributing Institute: |
Elektronische Materialien; PGI-7 JARA-FIT; JARA-FIT |
Published in: | Physical chemistry, chemical physics, 25 (2023) 21, S. 14766 - 14777 |
Imprint: |
Cambridge
RSC Publ.
2023
|
DOI: |
10.34734/FZJ-2024-01443 |
DOI: |
10.1039/D3CP01160G |
Document Type: |
Journal Article |
Research Program: |
Memristive Materials and Devices |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1039/D3CP01160G in citations.
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