This title appears in the Scientific Report :
2000
Please use the identifier:
http://hdl.handle.net/2128/834 in citations.
Curie Weiss-type law for strain and stress effects on the dielectric response of ferroelectric thin films
Curie Weiss-type law for strain and stress effects on the dielectric response of ferroelectric thin films
Variations of the dielectric properties of ferroelectric thin films with the misfit strain S-m in the film/substrate system and the associated biaxial stress sigma inside the film are analyzed theoretically. Calculations are performed in a mean-field approximation for the dielectric response display...
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Personal Name(s): | Pertsev, N. A. |
---|---|
Koukhar, M. E. / Waser, R. / Hoffmann, S. | |
Contributing Institute: |
Institut für Festkörperforschung; IFF |
Published in: | Applied physics letters, 77 (2000) S. 2596 - 2598 |
Imprint: |
Melville, NY
American Institute of Physics
2000
|
Physical Description: |
2596 - 2598 |
Document Type: |
Journal Article |
Research Program: |
Festkörperforschung für die Informationstechnik |
Series Title: |
Applied Physics Letters
77 |
Subject (ZB): | |
Link: |
OpenAccess |
Publikationsportal JuSER |
Variations of the dielectric properties of ferroelectric thin films with the misfit strain S-m in the film/substrate system and the associated biaxial stress sigma inside the film are analyzed theoretically. Calculations are performed in a mean-field approximation for the dielectric response displayed in a plate-capacitor setup by single crystalline films epitaxially grown on tensile substrates (S-m> 0). It is shown that, in the absence of misfit-strain-induced phase transitions, the film dielectric susceptibility eta(33) obeys the Curie-Weiss-type law eta(33)(S-m) = epsilon(0)K(S)/(S-m-S-m*), eta(33)(sigma) = epsilon(0)K(sigma)/(sigma-sigma*). Theoretical predictions are compared with the measured stress dependence of the dielectric response of polycrystalline Ba0.7Sr0.3TiO3 films grown on Pt/SiO2/Si. The theory explains the observed dielectric behavior and predicts the existence of in-plane polarization state in this film/substrate system. (C) 2000 American Institute of Physics. [S0003-6951(00)03542-7]. |