This title appears in the Scientific Report :
2000
Please use the identifier:
http://hdl.handle.net/2128/838 in citations.
Ultraviolet light oxidation for magnetic tunnel junctions
Ultraviolet light oxidation for magnetic tunnel junctions
Recently, ferromagnetic tunnel junctions attracted much interest because they exhibit large magnetoresistance effects up to Delta R/R=40% at room temperature. In this paper, an alternative approach will be presented, i.e., exposing the aluminum film to ultraviolet light during oxidation. The underly...
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Personal Name(s): | Rottländer, P. |
---|---|
Kohlstedt, H. / Grünberg, P. A. / Girgis, P. | |
Contributing Institute: |
Institut für Festkörperforschung; IFF |
Published in: | Journal of applied physics, 87 (2000) S. 6067 |
Imprint: |
Melville, NY
American Institute of Physics
2000
|
Physical Description: |
6067 |
Document Type: |
Journal Article |
Research Program: |
Festkörperforschung für die Informationstechnik |
Series Title: |
Journal of Applied Physics
87 |
Subject (ZB): | |
Link: |
OpenAccess |
Publikationsportal JuSER |
Recently, ferromagnetic tunnel junctions attracted much interest because they exhibit large magnetoresistance effects up to Delta R/R=40% at room temperature. In this paper, an alternative approach will be presented, i.e., exposing the aluminum film to ultraviolet light during oxidation. The underlying mechanism can be explained in the framework of the Cabrera-Mott theory of oxidation. With UV assisted oxidation, magnetoresistance ratios of up to 22.5% at room temperature have been obtained in Ni80Fe20-Al(ox)-Co junctions. The resistivities were in the 1 k Omega mu m(2) range for junctions of 25-400 mu m(2). Barrier heights obtained by fitting to different theories will be discussed. (C) 2000 American Institute of Physics. [S0021-8979(00)55308-0]. |