This title appears in the Scientific Report :
2010
Please use the identifier:
http://dx.doi.org/10.1143/JJAP.49.041303 in citations.
Highly Conductive p-Type Silicon Carbon Alloys Deposited by Hot-Wire Chemical Vapor Deposition
Highly Conductive p-Type Silicon Carbon Alloys Deposited by Hot-Wire Chemical Vapor Deposition
P-type microcrystalline silicon carbide (mu c-SiC:H) alloys for application as a window layer in silicon based thin film solar cells were grown by hot-wire chemical vapor deposition using hydrogen diluted monomethylsilane and trimethylaluminum. Conductivities up to 0.1 S/cm were obtained for p-type...
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Personal Name(s): | Chen, T. |
---|---|
Yang, D. / Carius, R. / Finger, F. | |
Contributing Institute: |
Photovoltaik; IEF-5 |
Published in: | Japanese journal of applied physics, 49 (2010) S. 041303 |
Imprint: |
Tokyo
Inst. of Pure and Applied Physics
2010
|
Physical Description: |
041303 |
DOI: |
10.1143/JJAP.49.041303 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Japanese Journal of Applied Physics
49 |
Subject (ZB): | |
Publikationsportal JuSER |
P-type microcrystalline silicon carbide (mu c-SiC:H) alloys for application as a window layer in silicon based thin film solar cells were grown by hot-wire chemical vapor deposition using hydrogen diluted monomethylsilane and trimethylaluminum. Conductivities up to 0.1 S/cm were obtained for p-type material. The optical properties were studied by photothermal deflection spectroscopy. At photon energies below 1.25 eV, both free carrier and defect absorption lead to a high absorption coefficient. For photon energies >2.0 eV, the absorption coefficient is affected by the crystallinity and the structural composition. The structure of Al-doped mu c-SiC:H thin films were investigated by infrared and Raman spectroscopy. It was found that increase of the deposition pressure can compensate for the loss of crystallinity caused by Al-doping. At high deposition pressure (>100 Pa), increasing contributions of hexagonal SiC alloys, and separated carbon phases are observed. (C) 2010 The Japan Society of Applied Physics |