This title appears in the Scientific Report :
2010
Ion channeling strain measurements of uniaxially strained Si/SiGe heterostructures on Si(100) and Si(110)
Ion channeling strain measurements of uniaxially strained Si/SiGe heterostructures on Si(100) and Si(110)
Saved in:
Personal Name(s): | Holländer, B. |
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Minamisawa, R. A. / Buca, D. / Trinkaus, H. / Mantl, S. / Loo, R. / Hartmann, J.-M. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: |
17th International Conference on Ion Beam Modification of Materials, IBMM2010 |
Imprint: |
2010
|
Conference: | Montreal, Canada 2010-08-22 |
Document Type: |
Poster |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Publikationsportal JuSER |
Description not available. |