This title appears in the Scientific Report :
2012
Please use the identifier:
http://hdl.handle.net/2128/7800 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.3702850 in citations.
Mechanism of contact resistance formation in ohmic contacts with high dislocation density
Mechanism of contact resistance formation in ohmic contacts with high dislocation density
A new mechanism of contact resistance formation in ohmic contacts with high dislocation density is proposed. Its specific feature is the appearance of a characteristic region where the contact resistance increases with temperature. According to the mechanism revealed, the current flowing through the...
Saved in:
Personal Name(s): | Sachenko, A.V. |
---|---|
Belyaev, A.E. / Boltovets, N.S. / Konakova, R.V. / Kudryk, Ya.Ya / Novitskii, S.V. / Sheremet, V.N. / Li, J. / Vitusevich, S.A. | |
Contributing Institute: |
Bioelektronik; ICS-8 Bioelektronik; PGI-8 JARA-FIT; JARA-FIT |
Published in: | Journal of applied physics, 111 (2012) S. 083701 |
Imprint: |
Melville, NY
American Institute of Physics
2012
|
Physical Description: |
083701 |
DOI: |
10.1063/1.3702850 |
Document Type: |
Journal Article |
Research Program: |
BioSoft: Makromolekulare Systeme und biologische Informationsverarbeitung Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Journal of Applied Physics
111 |
Subject (ZB): | |
Link: |
Get full text Published under German "Allianz" Licensing conditions on 2012-04-16. Available in OpenAccess from 2012-04-16 |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.3702850 in citations.
A new mechanism of contact resistance formation in ohmic contacts with high dislocation density is proposed. Its specific feature is the appearance of a characteristic region where the contact resistance increases with temperature. According to the mechanism revealed, the current flowing through the metal shunts associated with dislocations is determined by electron diffusion. It is shown that current flows through the semiconductor near-surface regions where electrons accumulate. A feature of the mechanism is the realization of ohmic contact irrespective of the relation between the contact and bulk resistances. The theory is proved for contacts formed to III-V semiconductor materials as well as silicon-based materials. A reasonable agreement between theory and experimental results is obtained. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3702850] |