This title appears in the Scientific Report :
2012
Please use the identifier:
http://hdl.handle.net/2128/7801 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.4752715 in citations.
Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si
Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si
The temperature dependence of contact resistivity rho(c) in lapped silicon specimens with donor concentrations of 5 x 10(16), 3 x 10(17), and 8 x 10(17) cm(-3) was studied experimentally. We found that, after decreasing part of the rho(c)(T) curve in the low temperature range, an increasing part is...
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Personal Name(s): | Sachenko, A.V. |
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Belyaev, A.E. / Boltovets, N.S. / Vinogradov, A.O. / Kladko, V.P. / Konakova, R.V. / Kudryk, Ya.Ya / Kuchuk, A.V. / Sheremet, V.N. / Vitusevich, S.A. | |
Contributing Institute: |
Bioelektronik; ICS-8 Bioelektronik; PGI-8 JARA-FIT; JARA-FIT |
Published in: | Journal of applied physics, 112 (2012) S. 063703 |
Imprint: |
Melville, NY
American Institute of Physics
2012
|
Physical Description: |
063703 |
DOI: |
10.1063/1.4752715 |
Document Type: |
Journal Article |
Research Program: |
BioSoft: Makromolekulare Systeme und biologische Informationsverarbeitung Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Journal of Applied Physics
112 |
Subject (ZB): | |
Link: |
Get full text Published under German "Allianz" Licensing conditions on 2012-09-19. Available in OpenAccess from 2012-09-19 |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.4752715 in citations.
The temperature dependence of contact resistivity rho(c) in lapped silicon specimens with donor concentrations of 5 x 10(16), 3 x 10(17), and 8 x 10(17) cm(-3) was studied experimentally. We found that, after decreasing part of the rho(c)(T) curve in the low temperature range, an increasing part is registered with increasing temperature T. It is demonstrated that the formation of contact to a lapped Si wafer results in the generation of high dislocation density in the near-surface region of the semiconductor and also in ohmic contact behavior. In this case, current flows through the metal shunts associated with dislocations. The theory developed is in good agreement with experimental results. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752715] |