This title appears in the Scientific Report :
2009
Please use the identifier:
http://dx.doi.org/10.1016/j.nimb.2009.01.148 in citations.
Optical contrast formation in amorphous silicon carbide with high-energy focused ion beams
Optical contrast formation in amorphous silicon carbide with high-energy focused ion beams
Thin films (d similar to 1 mu m) of hydrogenated amorphous silicon carbide (a-Si1-xCx:H), deposited by RF reactive magnetron sputtering with different carbon content x, have been implanted with high fluences (Phi = 1016-1017 cm(-2)) of high-energy (E = 0.2-1 MeV) He+ ions as the implant species. The...
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Personal Name(s): | Tsvetkova, T. |
---|---|
Sellin, P. / Carius, R. / Angelov, O. / Dimova-Malinovska, D. / Zuk, J. | |
Contributing Institute: |
Photovoltaik; IEF-5 |
Published in: | Nuclear instruments & methods in physics research / B, 267 (2009) |
Imprint: |
Amsterdam [u.a.]
Elsevier
2009
|
DOI: |
10.1016/j.nimb.2009.01.148 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Nuclear Instruments and Methods in Physics Research Section B
267 |
Subject (ZB): | |
Publikationsportal JuSER |
Thin films (d similar to 1 mu m) of hydrogenated amorphous silicon carbide (a-Si1-xCx:H), deposited by RF reactive magnetron sputtering with different carbon content x, have been implanted with high fluences (Phi = 1016-1017 cm(-2)) of high-energy (E = 0.2-1 MeV) He+ ions as the implant species. The induced structural modification of the implanted material results in a considerable change of its optical properties, best manifested by a significant shift of the optical absorption edge to lower photon energies as obtained from photo-thermal-deflection spectroscopy (PDS) data. This shift is accompanied by a remarkable increase of the absorption coefficient over one order of magnitude (photo-darkening effect) in the measured photon energy range (0.6-3.8 eV), depending on the ion fluence, energy and carbon content of the films. These effects could be attributed both to additional defect introduction and increased graphitization, as confirmed by Raman spectroscopy and infra-red (IR) optical transmission measurements. The optical contrast thus obtained (between implanted and unimplanted film material) could be made use of in the area of high-density optical data storage using focused high-energy He+ ion beams. (C) 2009 Elsevier B.V. All rights reserved. |