This title appears in the Scientific Report :
2010
Please use the identifier:
http://dx.doi.org/10.1002/pssc.200982863 in citations.
Variation of the Fermi level in n-type microcrystalline silicon by electron bombardment and successive annealing: ESR and conductivity studies
Variation of the Fermi level in n-type microcrystalline silicon by electron bombardment and successive annealing: ESR and conductivity studies
Saved in:
Personal Name(s): | Astakhov, O. |
---|---|
Carius, R. / Petrusenko, Y. / Borysenko, V. / Barankov, D. / Finger, F. | |
Contributing Institute: |
Photovoltaik; IEF-5 |
Published in: | Physica status solidi / C (2010) S. 654 - 657 |
Imprint: |
Berlin
Wiley-VCH
2010
|
Physical Description: |
654 - 657 |
DOI: |
10.1002/pssc.200982863 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Physica Status Solidi C
7 |
Publikationsportal JuSER |
Description not available. |