This title appears in the Scientific Report :
2010
Si and SiGe based high mobility channel devices
Si and SiGe based high mobility channel devices
Saved in:
Personal Name(s): | Zhao, Q. T. |
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Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: |
The 2nd Sino-German Workshop of Cooperation |
Imprint: |
2010
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Conference: | Shanghai, China 2010-05-17 |
Document Type: |
Conference Presentation |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Publikationsportal JuSER |
Description not available. |