This title appears in the Scientific Report :
2010
Please use the identifier:
http://hdl.handle.net/2128/18109 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.3495990 in citations.
SrTiO3 ultra thin film capacitors on silicon substrates with significant interfacial passive layers
SrTiO3 ultra thin film capacitors on silicon substrates with significant interfacial passive layers
Using sputter deposition, nonepitaxial ultrathin film capacitors consisting of SrRuO3 electrodes and dielectric SrTiO3 (STO) were grown directly on oxidized silicon substrates. The surface roughness of the layers was found to be very low (<= 0.2 nm). Dielectric measurements as a function of tempe...
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Personal Name(s): | Schmelzer, S. |
---|---|
Bräuhaus, D. / Hoffmann-Eifert, S. / Meuffels, P. / Böttger, U. / Oberbeck, L. / Reinig, P. / Schröder, U. / Waser, R. | |
Contributing Institute: |
Elektronische Materialien; IFF-6 JARA-FIT; JARA-FIT |
Published in: | Applied physics letters, 97 (2010) S. 132907 |
Imprint: |
Melville, NY
American Institute of Physics
2010
|
Physical Description: |
132907 |
DOI: |
10.1063/1.3495990 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Applied Physics Letters
97 |
Subject (ZB): | |
Link: |
Get full text OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.3495990 in citations.
Using sputter deposition, nonepitaxial ultrathin film capacitors consisting of SrRuO3 electrodes and dielectric SrTiO3 (STO) were grown directly on oxidized silicon substrates. The surface roughness of the layers was found to be very low (<= 0.2 nm). Dielectric measurements as a function of temperature were performed on samples with different STO thickness down to 7 nm, showing temperature dependence of the interfacial passive layers. The dielectric constant of the STO films was found to be in the range of 200 at room temperature for all samples, which leads to a minimum capacitance equivalent thickness below 0.2 nm. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3495990] |