This title appears in the Scientific Report :
2010
Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack
Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack
Saved in:
Personal Name(s): | Zhang, B. |
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Yu, W. / Zhao, Q. T. / Hartmann, J.M. / Luptak, R. / Buca, D. / Bourdelle, K.K. / Wang, X. / Mantl, S. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: |
10th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT-2010 |
Imprint: |
2010
|
Conference: | Shanghai, China 2010-11-01 |
Document Type: |
Conference Presentation |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Publikationsportal JuSER |
Description not available. |