This title appears in the Scientific Report :
2012
Please use the identifier:
http://dx.doi.org/10.1088/0268-1242/27/11/115002 in citations.
GaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator prepared in situ by MOCVD
GaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator prepared in situ by MOCVD
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Personal Name(s): | Kordos, P. (Corresponding author) |
---|---|
Fox, Alfred / Kúdela, R / Mikulics, Martin / Stoklas, R / Gregušová, D | |
Contributing Institute: |
JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Semiconductor science and technology, 27 (2012) 11, S. 115002 - |
Imprint: |
Bristol
IOP Publ.
2012
|
DOI: |
10.1088/0268-1242/27/11/115002 |
Document Type: |
Journal Article |
Research Program: |
ohne Topic |
Publikationsportal JuSER |
Description not available. |