This title appears in the Scientific Report :
2013
Please use the identifier:
http://dx.doi.org/10.1039/c3tc00841j in citations.
Molecular precursor derived and solution processed indium–zinc oxide as a semiconductor in a field-effect transistor device. Towards an improved understanding of semiconductor film composition
Molecular precursor derived and solution processed indium–zinc oxide as a semiconductor in a field-effect transistor device. Towards an improved understanding of semiconductor film composition
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Personal Name(s): | Eichel, Rüdiger-A. (Corresponding author) |
---|---|
Jakes, Peter / Hoffmann, / Kaloumenos, / Heinschke, Silvio / Erdem, / Schneider, | |
Contributing Institute: |
Grundlagen der Elektrochemie; IEK-9 |
Published in: | Journal of materials chemistry / C, 1 14, S. 2577-2584 |
Imprint: |
London {[u.a.]
RSC
2013
|
DOI: |
10.1039/c3tc00841j |
Document Type: |
Journal Article |
Research Program: |
Renewable Energies |
Publikationsportal JuSER |
Description not available. |