This title appears in the Scientific Report :
2012
Please use the identifier:
http://dx.doi.org/10.1002/pssa.201200191 in citations.
Annealing induced defects in SiC, SiO x single layers, and SiC/SiO x hetero-superlattices
Annealing induced defects in SiC, SiO x single layers, and SiC/SiO x hetero-superlattices
Saved in:
Personal Name(s): | Ding, Kaining (Corresponding author) |
---|---|
Aeberhard, Urs / Beyer, Wolfhard / Astakhov, Oleksandr / Köhler, Florian / Breuer, Uwe / Finger, Friedhelm / Carius, Reinhard / Rau, Uwe | |
Contributing Institute: |
Photovoltaik; IEK-5 |
Published in: | Physica status solidi / A, 209 (2012) 10, S. 1960 - 1964 |
Imprint: |
Weinheim
Wiley-VCH
2012
|
DOI: |
10.1002/pssa.201200191 |
Document Type: |
Journal Article |
Research Program: |
Thin Film Photovoltaics |
Publikationsportal JuSER |
Description not available. |