This title appears in the Scientific Report :
2013
Please use the identifier:
http://hdl.handle.net/2128/19023 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.4801324 in citations.
Photoemission spectroscopy study of the lanthanum lutetium oxide∕silicon interface
Photoemission spectroscopy study of the lanthanum lutetium oxide∕silicon interface
Rare earth oxides are promising candidates for future integration into nano-electronics. A key property of these oxides is their ability to form silicates in order to replace the interfacial layer in Si-based complementary metal-oxide field effect transistors. In this work a detailed study of lantha...
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Personal Name(s): | Nichau, Alexander (Corresponding author) |
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Schnee, Michael / Schubert, Jürgen / Besmehn, Astrid / Rubio-Zuazo, J. / Breuer, Uwe / Bernardy, Patric / Holländer, Bernhard / Mücklich, A. / Castro, G. R. / von Borany, J. / Buca, Dan Mihai / Mantl, Siegfried | |
Contributing Institute: |
Elektronische Eigenschaften; PGI-6 Analytik; ZEA-3 JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | The @journal of chemical physics, 138 (2013) 15, S. 154709 |
Imprint: |
Melville, NY
American Institute of Physics
2013
|
DOI: |
10.1063/1.4801324 |
Document Type: |
Journal Article |
Research Program: |
Exploratory materials and phenomena Frontiers of charge based Electronics |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.4801324 in citations.
Rare earth oxides are promising candidates for future integration into nano-electronics. A key property of these oxides is their ability to form silicates in order to replace the interfacial layer in Si-based complementary metal-oxide field effect transistors. In this work a detailed study of lanthanum lutetium oxide based gate stacks is presented. Special attention is given to the silicate formation at temperatures typical for CMOS processing. The experimental analysis is based on hard x-ray photoemission spectroscopy complemented by standard laboratory experiments as Rutherford backscattering spectrometry and high-resolution transmission electron microscopy. Homogenously distributed La silicate and Lu silicate at the Si interface are proven to form already during gate oxide deposition. During the thermal treatment Si atoms diffuse through the oxide layer towards the TiN metal gate. This mechanism is identified to be promoted via Lu–O bonds, whereby the diffusion of La was found to be less important. |