This title appears in the Scientific Report :
2013
Please use the identifier:
http://dx.doi.org/10.1063/1.4795603 in citations.
Please use the identifier: http://hdl.handle.net/2128/16818 in citations.
Modulation phenomena in Si nanowire field-effect transistors characterized using noise spectroscopy and gamma radiation technique
Modulation phenomena in Si nanowire field-effect transistors characterized using noise spectroscopy and gamma radiation technique
Saved in:
Personal Name(s): | Pud, S. (Corresponding author) |
---|---|
Li, Jing / Petrychuk, M. / Feste, S. / Vitusevich, S. / Danilchenko, B. / Offenhäusser, A. / Mantl, S. | |
Contributing Institute: |
Bioelektronik; ICS-8 JARA-FIT; JARA-FIT Bioelektronik; PGI-8 |
Published in: | Journal of applied physics, 113 12, S. 124503 -1-10 |
Imprint: |
Melville, NY
American Institute of Physics
2013
|
DOI: |
10.1063/1.4795603 |
Document Type: |
Journal Article |
Research Program: |
Physics of the Cell Sensorics and bioinspired systems |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/16818 in citations.
Description not available. |