This title appears in the Scientific Report :
2013
Please use the identifier:
http://dx.doi.org/10.1063/1.4807001 in citations.
Please use the identifier: http://hdl.handle.net/2128/16812 in citations.
Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing
Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing
Saved in:
Personal Name(s): | Luong, Gia Vinh (Corresponding author) |
---|---|
Wirths, Stephan / Stefanov, S. / Holländer, Bernhard / Schubert, Jürgen / Conde, J. C. / Stoica, Toma / Breuer, Udo-Werner / Chiussi, S. / Goryll, M. / Buca, Dan Mihai / Mantl, Siegfried | |
Contributing Institute: |
Analytik; ZEA-3 JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Journal of applied physics, 113 (2013) 20, S. 204902 |
Imprint: |
Melville, NY
American Institute of Physics
2013
|
DOI: |
10.1063/1.4807001 |
Document Type: |
Journal Article |
Research Program: |
Frontiers of charge based Electronics |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/16812 in citations.
Description not available. |