Optimization of modulation-doped Ga1- xInxAs/lnP heterostructures towards extremely high mobilities
Optimization of modulation-doped Ga1- xInxAs/lnP heterostructures towards extremely high mobilities
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Personal Name(s): | Jäger, W. |
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Lüth, H. / Lengeler, B. / Dieker, Ch. / Klocke, Th. / Loken-Larsen, H. / Appenzeller, J. / Schäpers, Th. / Hollfelder, M. / Meyer, R. / Hardtdegen, H. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 |
Published in: | Journal of applied physics, 73 (1993) 9, S. 4489 - 4493 |
Imprint: |
American Institute of Physics
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Document Type: |
Journal Article |
Link: |
OpenAccess |
Publikationsportal JuSER |
Description not available. |