This title appears in the Scientific Report :
2013
Please use the identifier:
http://hdl.handle.net/2128/5489 in citations.
Si Nanowire Field Effect Transistors: Effect of Gamma Radiation Treatment.
Si Nanowire Field Effect Transistors: Effect of Gamma Radiation Treatment.
Novel test structures fabricated on the basis of Si nanowires are the ultimate building blocks for future nanoelectronics and biological sensor applications. These structures have to be stable in operation. However, a great many factors influence stability, especially in a nanowire channel. In this...
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Personal Name(s): | Vitusevich, Svetlana (Corresponding author) |
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Li, Jing / Pud, S. / Offenhaeusser, A. / Petrychuk, M. / Danilchenko, B. | |
Contributing Institute: |
Bioelektronik; PGI-8 JARA-FIT; JARA-FIT Bioelektronik; ICS-8 |
Imprint: |
2013
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Conference: | . 22-th.Int.Conf. on Noise and Fluctuations (ICNF 2013), Montpellier (France), 2013-06-24 - 2013-06-28 |
Document Type: |
Abstract |
Research Program: |
Physics of the Cell Sensorics and bioinspired systems |
Link: |
OpenAccess |
Publikationsportal JuSER |
Novel test structures fabricated on the basis of Si nanowires are the ultimate building blocks for future nanoelectronics and biological sensor applications. These structures have to be stable in operation. However, a great many factors influence stability, especially in a nanowire channel. In this contribution, we report on the transport and noise properties of nanowires with different channel lengths. We applied small-dose gamma irradiation treatment of the samples to obtain more stable operation of the test device structures. The structures under study were fabricated on the basis of SOI wafers using nanoimprint technology. High-quality nanowires were obtained by chemical wet etching with low defect density. In spite of relatively large lengths of the channels from 2µm to 22 µm, we found that normalized current noise spectral density decreases as a function of 1/(L2 ) in the samples with lengths below 7µm. Such dependence is characteristic of the contact contribution to the noise properties.At the same time, in relatively long samples the behavior was changed to 1/L dependence, demonstrating the priority of channel noise. The latter dependence was also registered for samples with small lengths after gamma irradiation, reflecting the improvement effect of the irradiation due to stress relaxation in the contact regions as well as increased stability of the structures and decreased scattering in the structure characteristics (Figure 1).An analysis of the random telegraph signal noise component, recorded for samples with small length before gamma treatment and reduced level after this treatment, confirms the obtained results. This demonstrates the positive effect of irradiation on the stability and reliability of the structure parameters. |