This title appears in the Scientific Report :
2013
Please use the identifier:
http://dx.doi.org/10.1109/ICNF.2013.6578984 in citations.
Noise and transport characteristics of silicon nanowire field effect transistors with liquid gate
Noise and transport characteristics of silicon nanowire field effect transistors with liquid gate
Saved in:
Personal Name(s): | Pud, S. (Corresponding author) |
---|---|
Li, Jing / Sibiliev, V. / Petrychuk, M. / Acevedo, A. / Offenhausser, A. / Vitusevich, S. | |
Contributing Institute: |
Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology; JARA-FIT Bioelektronik; PGI-8 Bioelektronik; ICS-8 |
Imprint: |
IEEE
2013
|
Physical Description: |
Th-P-1-4 |
DOI: |
10.1109/ICNF.2013.6578984 |
Conference: | 2013 International Conference on Noise and Fluctuations (ICNF), Montpellier (France), 2013-06-24 - 2013-06-28 |
Document Type: |
Contribution to a conference proceedings |
Research Program: |
Physics of the Cell Sensorics and bioinspired systems |
Publikationsportal JuSER |
Description not available. |