This title appears in the Scientific Report :
2013
Please use the identifier:
http://dx.doi.org/10.1109/ICNF.2013.6578937 in citations.
Noise properties of carbon nanotube FETs with top-and side-gate geometries: Effect of gamma irradiation3
Noise properties of carbon nanotube FETs with top-and side-gate geometries: Effect of gamma irradiation3
Saved in:
Personal Name(s): | Sydoruk, Viktor |
---|---|
Goss, Karin / Meyer, C. / Danilchenko, B. A. / Petrychuk, M. V. / Li, Jing / Pud, S. / Vitusevich, S. (Corresponding author) | |
Contributing Institute: |
Elektronische Eigenschaften; PGI-6 Bioelektronik; ICS-8 JARA-FIT; JARA-FIT Bioelektronik; PGI-8 |
Imprint: |
IEEE
2013
|
Physical Description: |
Tu-45-1-4 |
DOI: |
10.1109/ICNF.2013.6578937 |
Conference: | 2013 International Conference on Noise and Fluctuations (ICNF), Montpellier (France), 2013-06-24 - 2013-06-28 |
Document Type: |
Contribution to a conference proceedings |
Research Program: |
Physics of the Cell Sensorics and bioinspired systems |
Publikationsportal JuSER |
Description not available. |