This title appears in the Scientific Report :
2013
Please use the identifier:
http://dx.doi.org/10.1016/j.nimb.2012.11.088 in citations.
Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts
Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts
We have investigated the morphology and electrical properties of NiSiGe/SiGe contact by C+ ions pre-implanted into relaxed Si0.8Ge0.2 layers. Cross-section transmission electron microscopy revealed that both the surface and interface of NiSiGe were improved by C+ ions implantation. In addition, the...
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Personal Name(s): | Zhang, B. (Corresponding author) |
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Yu, W. / Zhao, Q. T. / Buca, D. / Breuer, Uwe / Hartmann, J. -M. / Holländer, B. / Mantl, S. / Zhang, M. / Wang, X. | |
Contributing Institute: |
Weiche Materie; ICS-3 Analytik; ZEA-3 Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Nuclear instruments & methods in physics research / B, 307 (2013) S. 408 - 411 |
Imprint: |
Amsterdam [u.a.]
Elsevier
2013
|
DOI: |
10.1016/j.nimb.2012.11.088 |
Document Type: |
Journal Article |
Research Program: |
Frontiers of charge based Electronics |
Publikationsportal JuSER |
We have investigated the morphology and electrical properties of NiSiGe/SiGe contact by C+ ions pre-implanted into relaxed Si0.8Ge0.2 layers. Cross-section transmission electron microscopy revealed that both the surface and interface of NiSiGe were improved by C+ ions implantation. In addition, the effective hole Schottky barrier heights (ΦBp) of NiSiGe/SiGe were extracted. ΦBp was observed to decrease substantially with an increase in C+ ion implantation dose. |