Reuters, B., Wille, A., Ketteniss, N., Hahn, H., Holländer, B., Heuken, M., . . . Vescan, A. (2013). Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers. Warrendale, Pa: TMS.
Chicago Style CitationReuters, Benjamin, A. Wille, N. Ketteniss, H. Hahn, B. Holländer, M. Heuken, H. Kalisch, andfavorite A. Vescan. Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers. Warrendale, Pa: TMS, 2013.
MLA CitationReuters, Benjamin, et al. Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers. Warrendale, Pa: TMS, 2013.
Warning: These citations may not always be 100% accurate.