This title appears in the Scientific Report :
2013
Please use the identifier:
http://dx.doi.org/10.1016/j.tsf.2012.10.039 in citations.
Transient phenomena in Cu(In,Ga)Se2 solar modules investigated by electroluminescence imaging
Transient phenomena in Cu(In,Ga)Se2 solar modules investigated by electroluminescence imaging
Industrially fabricated thin-film modules are investigated by electroluminescence (EL) photography. We observe metastable transients in a series of successive images recorded during application of forward bias immediately after the Cu(In,Ga)Se2 modules were kept in the dark for several hours. Our ex...
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Personal Name(s): | Tran, T. M. H. |
---|---|
Pieters, B. E. / Ulbrich, C. / Gerber, A. / Kirchartz, T. / Rau, U. | |
Contributing Institute: |
Photovoltaik; IEK-5 |
Published in: | Thin solid films, 535 S. 307-310 |
Imprint: |
Amsterdam [u.a.]
Elsevier
2013
|
DOI: |
10.1016/j.tsf.2012.10.039 |
Document Type: |
Journal Article |
Research Program: |
Thin Film Photovoltaics |
Publikationsportal JuSER |
Industrially fabricated thin-film modules are investigated by electroluminescence (EL) photography. We observe metastable transients in a series of successive images recorded during application of forward bias immediately after the Cu(In,Ga)Se2 modules were kept in the dark for several hours. Our experiments are conducted in the dark either under constant current (monitoring the module voltage) or vice versa. For both situations, the EL intensities increase with time, whereas we observe a decrease of the overall module voltage (at fixed current) or an increase of the current (at fixed voltage). We ascribe our observations to the simultaneous decrease of the bulk series resistance Rs and the reduction of recombination currents (an increase in the junction resistance Rj) during the forward bias soaking. A quantitative analysis of our data shows that the reduction of Rs we observe is much stronger than the increase of Rj. We also show that the bulk series resistance can strongly adulterate the determination of the sheet resistance of the front ZnO from EL images. |