This title appears in the Scientific Report :
2013
Please use the identifier:
http://dx.doi.org/10.1179/175355513X13715615193120 in citations.
Defect structure of non-stoichiometric and aliovalently doped perovskite oxides
Defect structure of non-stoichiometric and aliovalently doped perovskite oxides
Ferroelectric oxides are used in a large variety of modern technologies including sensors, transducers, actuators, thin film memories and energy harvesting devices. In that respect, one strategy to obtain tailored materials properties for a specific application is provided by systematically modifyin...
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Personal Name(s): | Eichel, Rüdiger-A. (Corresponding author) |
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Kungl, Hans / Jakes, Peter | |
Contributing Institute: |
Grundlagen der Elektrochemie; IEK-9 |
Published in: | Materials technology, 28 5, S. 241 - 246 |
Imprint: |
Amsterdam [u.a.]
Elsevier
2013
|
DOI: |
10.1179/175355513X13715615193120 |
Document Type: |
Journal Article |
Research Program: |
Renewable Energies Fuel Cells |
Publikationsportal JuSER |
Ferroelectric oxides are used in a large variety of modern technologies including sensors, transducers, actuators, thin film memories and energy harvesting devices. In that respect, one strategy to obtain tailored materials properties for a specific application is provided by systematically modifying the defect structure in terms of either aliovalent doping or nonstoichiometry. Recent advances in spectroscopic characterisation techniques combined with ab initio calculations have significantly contributed to the understanding of how defects impact the materials properties. This review provides an overview of recent results and lists still open questions to be addressed in future work. |