This title appears in the Scientific Report :
2013
Reduction of silicon dioxide interfacial layer to 4.6 A EOT by Al remote scavenging in high-k/metal gate stacks on Si
Reduction of silicon dioxide interfacial layer to 4.6 A EOT by Al remote scavenging in high-k/metal gate stacks on Si
Saved in:
Personal Name(s): | Nichau, Alexander (Corresponding author) |
---|---|
Schäfer, Anna / Knoll, Lars / Wirths, Stephan / Schram, T. / Ragnarsson, L. -A. / Schubert, Jürgen / Bernardy, Patric / Luysberg, Martina / Besmehn, Astrid / Breuer, Uwe / Buca, Dan Mihai / Mantl, Siegfried | |
Contributing Institute: |
Mikrostrukturforschung; PGI-5 Analytik; ZEA-3 JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Imprint: |
2013
|
Conference: | 18th Conference on 'Insulating Films on Semiconductors', Krakau (Polen), 2013-06-25 - 2013-06-28 |
Document Type: |
Conference Presentation |
Research Program: |
Frontiers of charge based Electronics |
Publikationsportal JuSER |
Description not available. |