This title appears in the Scientific Report :
2011
Please use the identifier:
http://dx.doi.org/10.1116/1.3536487 in citations.
Nanostructured resistive memory cells based on 8-nm-thin TiO2 films deposited by atomic layer deposition
Nanostructured resistive memory cells based on 8-nm-thin TiO2 films deposited by atomic layer deposition
Nanostructured Pt/TiO2/Ti/Pt crosspoint junctions with lateral dimensions as small as 100 X 100 nm(2) were prepared on silicon substrates by the use of nanoimprint lithography and reactive ion etching to structure the metal electrodes combined with atomic layer deposition of the resistive switching...
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Personal Name(s): | Kügeler, C. |
---|---|
Zhang, J. / Hoffmann-Eifert, S. / Kim, S.K. / Waser, R. | |
Contributing Institute: |
Elektronische Materialien; PGI-7 JARA-FIT; JARA-FIT |
Published in: | Journal of vacuum science & technology / A, 29 (2011) S. 01AD01 |
Imprint: |
New York, NY
Inst.
2011
|
Physical Description: |
01AD01 |
DOI: |
10.1116/1.3536487 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Journal of Vacuum Science and Technology A
29 |
Subject (ZB): | |
Publikationsportal JuSER |
Nanostructured Pt/TiO2/Ti/Pt crosspoint junctions with lateral dimensions as small as 100 X 100 nm(2) were prepared on silicon substrates by the use of nanoimprint lithography and reactive ion etching to structure the metal electrodes combined with atomic layer deposition of the resistive switching TiO2 layer. A thickness of the amorphous TiO2 films of only 8 nm already led to functioning nanocrosspoint structures with respect to resistance switching behavior. As-prepared structures exhibited very high-resistance states with diodelike I-V characteristics. After a negative-current-driven electroforming step, the devices could be repeatably switched between two stable states. The switching characteristics were found to depend strongly on the resistance state after the electroforming procedure. Low resistance values around 1 k Omega led to high current switching, and resistances of about 10 k Omega led to low current switching. Furthermore, multilevel switching was demonstrated by the use of 10 and 50 ns set voltage pulses. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3536487] |