This title appears in the Scientific Report :
2010
Please use the identifier:
http://dx.doi.org/10.1016/j.mee.2009.11.034 in citations.
Observation of unipolar resistance switching in silver doped methyl-silsesquioxane
Observation of unipolar resistance switching in silver doped methyl-silsesquioxane
Resistive switching materials attract high scientific interest as a candidate for potential next-generation non-volatile memories. Nano crossbar structures and single junctions down to 60 x 60 nm(2) with integrated silver doped methyl-silsesquioxane (MSQ) as switching material are fabricated using U...
Saved in:
Personal Name(s): | Rosezin, R. |
---|---|
Meier, M. / Trellenkamp, S. / Kügeler, C. / Waser, R. | |
Contributing Institute: |
Elektronische Materialien; IFF-6 Prozesstechnologie; IBN-PT JARA-FIT; JARA-FIT |
Published in: | Microelectronic engineering, 87 (2010) |
Imprint: |
[S.l.] @
Elsevier
2010
|
DOI: |
10.1016/j.mee.2009.11.034 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Microelectronic Engineering
87 |
Subject (ZB): | |
Publikationsportal JuSER |
Resistive switching materials attract high scientific interest as a candidate for potential next-generation non-volatile memories. Nano crossbar structures and single junctions down to 60 x 60 nm(2) with integrated silver doped methyl-silsesquioxane (MSQ) as switching material are fabricated using UV nano imprint. Here silver doped MSQ with platinum top and bottom electrodes replaces the formerly used material stack with undoped MSQ between platinum bottom and silver top electrodes. The new material system yields advantages regarding the process temperature budget and therefore multiple crossbar arrays and electrode layers are possible in order to multiply the integration density by the number of crossbar layers. (C) 2009 Elsevier B.V. All rights reserved. |