This title appears in the Scientific Report :
2013
Please use the identifier:
http://hdl.handle.net/2128/17341 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.4855436 in citations.
Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys
Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys
We investigated Raman vibrational modes in silicon-germanium-tin layers grown epitaxially on germanium/silicon virtual substrates using reduced pressure chemical vapor deposition. Severalexcitation wavelengths were utilized to accurately analyze Raman shifts in ternary layers with uniform silicon an...
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Personal Name(s): | Fournier-Lupien, J. -H. |
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Mukherjee, S. / Wirths, S. / Pippel, E. / Hayazawa, N. / Mussler, G. / Hartmann, J. M. / Desjardins, P. / Buca, D. / Moutanabbir, O. (Corresponding author) | |
Contributing Institute: |
Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Applied physics letters, 103 (2013) 26, S. 263103 |
Imprint: |
Melville, NY
American Institute of Physics
2013
|
DOI: |
10.1063/1.4855436 |
Document Type: |
Journal Article |
Research Program: |
Frontiers of charge based Electronics |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.4855436 in citations.
We investigated Raman vibrational modes in silicon-germanium-tin layers grown epitaxially on germanium/silicon virtual substrates using reduced pressure chemical vapor deposition. Severalexcitation wavelengths were utilized to accurately analyze Raman shifts in ternary layers with uniform silicon and tin content in 4–19 and 2–12 at. % ranges, respectively. The excitation using a633 nm laser was found to be optimal leading to a clear detection and an unambiguous identification of all first order modes in the alloy. The influence of both strain and composition on these modes is discussed. The strain in the layers is evaluated from Raman shifts and reciprocal space mapping data and the obtained results are discussed in the light of recent theoretical calculations. |