This title appears in the Scientific Report :
2013
Please use the identifier:
http://hdl.handle.net/2128/5769 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.4775599 in citations.
Search for spin gapless semiconductors: The case of inverse Heusler compounds
Search for spin gapless semiconductors: The case of inverse Heusler compounds
We employ ab-initio electronic structure calculations to search for spin gapless semiconductors, a recently identified new class of materials, among the inverse Heusler compounds. The occurrence of this property is not accompanied by a general rule and results are materials specific. The six compoun...
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Personal Name(s): | Skaftouros, S. (Corresponding author) |
---|---|
Ozdogan, K. / Sasioglu, E. / Galanakis, I. | |
Contributing Institute: |
Quanten-Theorie der Materialien; IAS-1 Quanten-Theorie der Materialien; PGI-1 |
Published in: | Applied physics letters, 102 S. 022402 |
Imprint: |
Melville, NY
American Institute of Physics
2013
|
DOI: |
10.1063/1.4775599 |
Document Type: |
Journal Article |
Research Program: |
Spin-based and quantum information |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.4775599 in citations.
We employ ab-initio electronic structure calculations to search for spin gapless semiconductors, a recently identified new class of materials, among the inverse Heusler compounds. The occurrence of this property is not accompanied by a general rule and results are materials specific. The six compounds identified show semiconducting behavior concerning the spin-down band structure and in the spin-up band structure the valence and conduction bands touch each other leading to 100% spin-polarized carriers. Moreover these six compounds should exhibit also high Curie temperatures and thus are suitable for spintronics applications. |