This title appears in the Scientific Report : 2002 

Femtosecond silicon K alpha pulses from laser-produced plasmas
Feurer, T.
Morak, A. / Uschmann, I. / Ziener, C. / Schwoerer, H. / Reich, C. / Gibbon, P. / Forster, E. / Sauerbrey, R. / Ortner, K. / Becker, C. R.
Zentralinstitut für Angewandte Mathematik; ZAM
Physical review / E, 65 (2002) S. 016412
College Park, Md. APS 2002
016412
10.1103/PhysRevE.65.016412
Journal Article
Methoden und Systeme der Informationstechnik
Physical Review E 65
J
OpenAccess
Please use the identifier: http://hdl.handle.net/2128/2213 in citations.
Please use the identifier: http://dx.doi.org/10.1103/PhysRevE.65.016412 in citations.
Ultrashort bursts of silicon Kalpha x-ray radiation from femtosecond-laser-produced plasmas have been generated. A cross-correlation measurement employing a laser-triggered ultrafast structural change of a CdTe-crystal layer (320 nm) shows a Kalpha pulse duration between 200 fs and 640 fs. This result is corroborated by particle in cell simulations combined with a Monte-Carlo electron stopping code and calculations on the structural changes of the crystal lattice.