This title appears in the Scientific Report :
2013
Please use the identifier:
http://dx.doi.org/10.1063/1.4848320 in citations.
Transition from Schottky-barrier-determined to channel transport regime with low noise in carbon nanotube field effect transistors
Transition from Schottky-barrier-determined to channel transport regime with low noise in carbon nanotube field effect transistors
Saved in:
Personal Name(s): | Sydoruk, Viktor |
---|---|
Petrychuk, M. V. / Ural, A. / Bosman, G. / Offenhäusser, A. / Vitusevich, Svetlana (Corresponding author) | |
Contributing Institute: |
JARA-FIT; JARA-FIT Bioelektronik; ICS-8 Bioelektronik; PGI-8 |
Published in: | 1566 |
Published in: |
AIP conference proceedings Series |
Imprint: |
AIP Conference Proceedingd
2013
|
Physical Description: |
131-132 |
ISBN: |
978-0-7354-1194-4 |
DOI: |
10.1063/1.4848320 |
Conference: | THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012, Zurich (Switzerland), 2012-07-29 - 2012-03-08 |
Document Type: |
Contribution to a book Contribution to a conference proceedings Internal Report |
Research Program: |
Physics of the Cell Sensorics and bioinspired systems |
Publikationsportal JuSER |
Description not available. |