This title appears in the Scientific Report :
2013
Please use the identifier:
http://dx.doi.org/10.1063/1.4848449 in citations.
Transport and noise properties of Si nanowire channels with different lengths before and after gamma radiation treatment
Transport and noise properties of Si nanowire channels with different lengths before and after gamma radiation treatment
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Personal Name(s): | Li, Jing |
---|---|
Vitusevich, Svetlana (Corresponding author) / Petrychuk, Mykhailo / Pud, Sergii / Sydoruk, Viktor / Danilchenko, Boris / Offenhäusser, Andreas | |
Contributing Institute: |
JARA-FIT; JARA-FIT Bioelektronik; ICS-8 Bioelektronik; PGI-8 |
Published in: | 1566 |
Published in: |
AIP Conference Proceedings Series |
Imprint: |
AIP Conference Proceedings
2013
|
Physical Description: |
389-390 |
DOI: |
10.1063/1.4848449 |
Conference: | THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012, Zurich (Switzerland), 2012-07-29 - 2012-03-08 |
Document Type: |
Contribution to a book Contribution to a conference proceedings |
Research Program: |
Physics of the Cell Sensorics and bioinspired systems |
Publikationsportal JuSER |
Description not available. |