This title appears in the Scientific Report :
2013
Please use the identifier:
http://dx.doi.org/10.1063/1.4848285 in citations.
A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density
A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density
Saved in:
Personal Name(s): | Sachenko, A. V. |
---|---|
Belyaev, A. E. / Boltovets, N. S. / Konakova, R. V. / Kudryk, Ya. Ya. / Novitskii, S. V. / Sheremet, V. N. / Vinogradov, A. O. / Li, Jing / Vitusevich, Svetlana (Corresponding author) | |
Contributing Institute: |
JARA-FIT; JARA-FIT Bioelektronik; PGI-8 Bioelektronik; ICS-8 |
Published in: | 1566 |
Published in: |
AIP Conference Proceedings Series |
Imprint: |
AIP Conference Proceedings
2013
|
Physical Description: |
61-62 |
ISBN: |
978-0-7354-1194-4 |
DOI: |
10.1063/1.4848285 |
Conference: | THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012, Zurich (Switzerland), 2012-07-29 - 2012-03-08 |
Document Type: |
Contribution to a book Contribution to a conference proceedings |
Research Program: |
Physics of the Cell Sensorics and bioinspired systems |
Publikationsportal JuSER |
Description not available. |