This title appears in the Scientific Report : 2013 

Rapid thermal synthesis of GaN nanocrystals and nanodisks
Sofer, Zdeněk (Corresponding author)
Sedmidubský, David / Huber, Štěpán / Šimek, Petr / Šaněk, Filip / Jankovský, Ondřej / Gregorová, Eva / Fiala, Roman / Matějková, Stanislava / Mikulics, Martin
Halbleiter-Nanoelektronik; PGI-9
Journal of nanoparticle research, 15 (2013) 1, S. 1411
Dordrecht [u.a.] Springer Science + Business Media B.V 2013
10.1007/s11051-012-1411-6
Journal Article
Frontiers of charge based Electronics
Please use the identifier: http://dx.doi.org/10.1007/s11051-012-1411-6 in citations.
Gallium nitride materials are at the forefront of nanoelectronic research due to their importance for UV optoelectronics. In this contribution, we present a facile and well-controlled synthesis of GaN nanodisks by rapid thermal ammonolysis of complex gallium fluoride precursor. We observed the formation of GaN nanodisks in 150 s at 800 °C. The structural properties of GaN were investigated by X-ray diffraction, Raman spectroscopy, and micro-photoluminescence. The morphology of GaN was investigated by scanning electron microscopy and the magnetic properties by superconducting quantum interference device (SQUID) techniques. The morphology of nanodisks was strongly influenced by the temperature of synthesis. The structure characterization shows a high concentration of defects related mainly to the vacancies of N and Ga. The magnetic measurement by SQUID shows paramagnetic behavior induced by structure defects. These findings have a strong implication on the construction of modern optoelectronic nanodevices.